Single Event Effects in a 0.25 μm Silicon-On-Sapphire CMOS Technology
نویسندگان
چکیده
Wickham Chen, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1402. Fax: 214-768-3573. Email: [email protected] Tiankuan Liu, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1541. Fax: 214-768-4095. Email: [email protected] Ping Gui, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1733. Fax: 214-768-3573. Email: [email protected] Annie Chu Xiang, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1472. Fax: 214-768-4095. Email: [email protected]
منابع مشابه
Total Ionization Dose Effects and Single-Event Effects Studies of a 0.25 μm Silicon-On-Sapphire CMOS Technology
Silicon-on-Sapphire (SOS) CMOS is an attractive technology for radiation-tolerant circuits design. It eliminates single-event latch-up and has a smaller sensitive volume for single-event upsets (SEUs) and single-event transients (SETs) compared to Bulk CMOS technology [1, 2]. However, like any Silicon-On-Insulator technology, SOS technology has back-channel leakage as part of the total ionizati...
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